MCH4021 Datasheet, PDF (1/9 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifier

Ordering number : ENA1281
MCH4021
RF Transistor
8V, 150mA, fT=16GHz, NPN Single MCPH4
http://onsemi.com
Features
• _{Low-noise use : NF=1.2dB typ (f=1GHz).}
• _{High cut-off frequency : fT=16GHz typ (VCE=5V).}
• _{High gain : |S21e|}²_{=17.5dB typ (f=1GHz).}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
Unit
15
V
8
V
2
V
150 mA
400 mW
150
°C
-55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Forward Transfer Gain
Noise Figure
Marking : GL
Symbol
ICBO
IEBO
hFE
fT
|S21e|²
NF
Conditions
VCB=5V, IE=0A
VEB=1V, IC=0A
VCE=5V, IC=50mA
VCE=5V, IC=50mA
VCE=5V, IC=50mA, f=1GHz
VCE=1V, IC=10mA, f=1GHz
Ratings
Unit
min
typ
max
1.0
μA
1.0
μA
60
150
13
16
GHz
17.5
dB
1.2
1.8 dB
Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
Semiconductor Components Industries, LLC, 2013
August, 2013
80608AB TI IM TC-00001500 No. A1281-1/9