MCH3486 Datasheet, PDF (1/5 Pages) ON Semiconductor – Single N-Channel Power MOSFET

MCH3486
Power MOSFET
60V, 137mΩ, 2A, Single N-Channel
www.onsemi.com
Features
• Low RDS(on)
• 4V Drive
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS Compliance
• Small Surface Mount Package (MCPH3)
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
VDSS
VGSS
ID
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
Power Dissipation
When mounted on ceramic substrate
PD
(900mm²Ã—0.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
Value
Unit
60
V
±20
V
2
A
8
A
1
W
150
°C
−55 to +150
°C
VDSS
60V
RDS(on) Max
137 mΩ@10V
192 mΩ@4.5V
217 mΩ@4V
ID Max
2A
Electrical Connection
N-Channel
3
1
1:Gate
2:Source
2 ^3:Drain
Packing Type:TL
Marking
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm²Ã—0.8mm)
Symbol
R_θJA
Value
Unit
125
°C/W
FT
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
October 2014 - Rev. 1
Publication Order Number :
MCH3486/D