MCH3484 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

MCH3484
Power MOSFET
20V, 40mΩ, 4.5A, Single N-Channel
www.onsemi.com
Features
 On-Resistance RDS(on)1=33m (typ)
 0.9V Drive
 Pb-Free, Halogen Free and RoHS Compliance
 ESD Diode-Protected Gate
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
VDSS
VGSS
ID
Drain Current (Pulse)
PW10s, duty cycle1%
IDP
Power Dissipation
When mounted on ceramic substrate
PD
(900mm²ï‚´0.8mm)
Junction Temperature
Tj
Operating Temperature
Topr
Storage Temperature
Tstg
Value
Unit
20
V
5
V
4.5
A
18
A
1.0
W
150
C
5 to +150
C
55 to +150
C
Electrical Connection
N-Channel
3
1
1 : Gate
2 : Source
2
3 : Drain
Packing Type : TL Marking
FR
TL
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm²  0.8mm)
Symbol
R_JA
Value
125
Unit
C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
January 2015 - Rev. 2
Publication Order Number :
MCH3484/D