MCH3478 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1353B
MCH3478
N-Channel Power MOSFET
30V, 2A, 165mΩ, Single MCPH3
http://onsemi.com
Features
• _{Low ON-resistance}
• _{1.8V drive}
• _{Protection diode in}
• _{Ultrahigh speed switching}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Conditions
Duty cycle≤1%
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm)
When mounted on ceramic substrate (900mm²Ã—0.8mm), PW=10s
Ratings
Unit
30
V
±12
V
2
A
2.5
A
8
A
0.8
W
1.2
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7019A-003
MCH3478-TL-H
2.0
0.15
MCH3478-TL-W
3
0 to 0.02
1
2
0.65
0.3
1 : Gate
2 : Source
3 : Drain
MCPH3
Product & Package Information
• Package
: MCPH3
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
FK
TL
Electrical Connection
3
1
2
Semiconductor Components Industries, LLC, 2013
December, 2013
D1113 TKIM TC-00003076/60612TKIM/21809PE MSIM TC-00001860 No. A1353-1/5