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| MCH3477 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |||
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MCH3477
Power MOSFET
20V, 38mâ¦, 4.5A, Single N-Channel
www.onsemi.com
Features
ï· High Speed Switchingï
ï· 1.8V Drive
ï· ESD Diode-Protected Gate
ï· Low On-Resistance
ï·ï Pb-Free, Halogen Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25ï°C
Parameter
Symbol
Drain to Source Voltage
VDSS
Gate to Source Voltage
Drain Current (DC)
VGSS
ID
Drain Current (Pulse)
PWï£10ïs, duty cycleï£1%
IDP
Power Dissipation
When mounted on ceramic substrate
PD
(900mm2ï´0.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm2ï´0.8mm)
Symbol
Rï±JA
Value
Unit
20
V
ï±12
V
4.5
A
18
A
1.0
W
150
ï°C
ï55 to +150
ï°C
Value
Unit
125
ï°C/W
VDSS
20V
RDS(on) Max
38 mâ¦@4.5V
61 mâ¦@2.5V
99 mâ¦@1.8V
ID Max
4.5A
Electrical Connection
N-Channel
3
1
1 : Gate
2 : Source
3 : Drain
2
Packing Type:TL
Marking
FJ
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
January 2015 - Rev. 2
Publication Order Number :
MCH3477/D
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