MCH3476 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

MCH3476
Power MOSFET
20V, 125mΩ, 2A, Single N-Channel
www.onsemi.com
Features
• Low On-Resistance
• 1.8V Drive
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS Compliance
VDSS
20V
RDS(on) Max
125mΩ@ 4.5V
190mΩ@ 2.5V
310mΩ@ 1.8V
ID _Max
2A
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source Voltage
VDSS
Gate to Source Voltage
Drain Current (DC)
VGSS
ID
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
IDP
Power Dissipation
When mounted on ceramic substrate
PD
(900mm² × 0.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm² × 0.8mm)
Symbol
R_θJA
Value
Unit
20
V
±12
V
2
A
8
A
0.8
W
150
°C
−55 to +150
°C
Value
Unit
156.2
°C/W
Electrical Connection
N-Channel
3
1
1 : Gate
2 : Source
3 : Drain
2
Packing Type : TL Marking
FH
TL
FH : Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
March 2015 - Rev. 2
Publication Order Number :
MCH3476/D