MCH3474 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

MCH3474
Power MOSFET
30V, 50mΩ, 4A, Single N-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
• Low On-Resistance
• High Speed Switching
• 1.8V drive
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS compliance
Typical Applications
• DC/DC Converter
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
±12
V
Drain Current (DC)
ID
4
A
Drain Current (Pulse)
PW ≤ 10μs, duty cycle ≤ 1%
IDP
16
A
Power Dissipation
When mounted on ceramic substrate
PD
(900mm² × 0.8mm)
1
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm² × 0.8mm)
Symbol
R_θJA
Value
Unit
125 °C/W
www.onsemi.com
VDSS
30V
RDS(on) Max
50mΩ@ 4.5V
72mΩ@ 2.5V
130mΩ@ 1.8V
ID _Max
4A
ELECTRICAL CONNECTION
N-Channel
PACKING TYPE : TL MARKING
FF
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
June 2015 - Rev. 1
Publication Order Number :
MCH3474/D