MCH3376 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1564B
MCH3376
Power MOSFET
–20V, _241mΩ, –1.5A, _{Single P-Channel}
http://onsemi.com
Features
• _{ESD diode-Protected gate}
• _{High speed switching and Low loss}
• _{Pb-free and RoHS Compliance}
• _{Drive at low voltage:1.8V drive}
• _{Low RDS(on)}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
VDSS
VGSS
ID
IDP
PD
Tj
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Ratings
Unit
--20
V
±10
V
--1.5
A
--6
A
0.8
W
150
°C
--55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7019A-003
MCH3376-TL-E
2.0
0.15
MCH3376-TL-W
3
0 to 0.02
Product & Package Information
• Package
: MCPH3
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL Marking
QH
1
2
0.65
0.3
1 : Gate
2 : Source
3 : Drain
MCPH3
TL
Electrical Connection
3
1
2
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
July, 2014
72814HK TC-00003112/60612TKIM/O1409TKIM PE No. A1564-1/5