MCH3375 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

MCH3375
Power MOSFET
–30V, 295mΩ, –1.6A, Single P-Channel
www.onsemi.com
Features
• On-Resistance RDS(on)1=227mΩ (typ)
• 4V Drive
• High Speed Switching and Low Loss
• Pb-Free, Halogen Free and RoHS Compliance
VDSS
–30V
RDS(on) Max
295mΩ@ –10V
523mΩ@ –4.5V
609mΩ@ –4V
ID _Max
–1.6A
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
–30
V
Gate to Source Voltage
Drain Current (DC)
VGSS
ID
±20
V
–1.6
A
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
IDP
–6.4
A
Power Dissipation
When mounted on ceramic substrate
PD
(900mm² × 0.8mm)
Junction Temperature
Tj
0.8
W
150
°C
Storage Temperature
Tstg
−55 to +150
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm² × 0.8mm)
Symbol
R_θJA
Value
Unit
156.25
°C/W
Electrical Connection
P-Channel
3
1
1 : Gate
2 : Source
3 : Drain
2
Packing Type : TL Marking
QG
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
February 2015 - Rev. 2
Publication Order Number :
MCH3375/D