MC33169 Datasheet, PDF (1/10 Pages) ON Semiconductor – GaAs POWER AMPLIFIER SUPPORT IC

GaAs Power Amplifier
Support IC
The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs
used in hand–held telephones such as GSM and PCS. This device provides
negative voltages for full depletion of Enhanced MESFETs as well as a
priority management system of drain switching, ensuring that the negative
voltage is always present before turning “on” the Power Amplifier. Additional
features include an idle mode input and a direct drive of the N–Channel drain
switch transistor. This product is available in a 4.0 V version intended for
control of the RF Power Amplifier in GSM, DCS1800 and PCS applications.
• Negative Regulated Output for Full Depletion of GaAs MESFETs
• Drain Switch Priority Management Circuit
• CMOS Compatible Inputs
• Idle Mode Input (Standby Mode) for Very Low Current Consumption
• Output Signal Directly Drives N–Channel FET
• Low Startup and Operating Current
Order this document by MC33169/D
MC33169
GaAs POWER AMPLIFIER
SUPPORT IC
SEMICONDUCTOR
TECHNICAL DATA
14
1
DTB SUFFIX
PLASTIC PACKAGE
CASE 948G
(TSSOP–14)
PIN CONNECTIONS
Simplified Block Diagram
VBB Double
+ ^C3
12
+–
–+
C1 ₂ C2 ₁
VCC
14
VBB ₁₁ 3
Triple _–+C4
Tx Power
Control 9
Input
13
Idle
Mode Input
Gnd ⁶
VBB
Generator
(Voltage Tripler)
MC33169
Priority
Management
Sense
Charge
Pump
Negative
Generator
8
Gate Drive Output
+
VBattery
(2.7 to 7.0 V)
MMSF4N01HD
RF
RF
In
Out
Power Amplifier
10
Sense Input
7 _–+ 5
Cp
4 _–+
VO
Output
Ci
(– 4.0 V)
+ ^Cf
Rf
This device contains 148 active transistors.
C2 Input 1
C1/C2 2
C1 Input 3
VO Output 4
VO Charge Pump
Capacitor+
5
Gnd 6
VO Charge Pump
Capacitor–
7
14 VCC
13 Idle Mode Input
12 VBB Double
11 VBB Triple
10 Sense Input
9
Tx Power
Control Input
8 Gate Drive Output
(Top View)
ORDERING INFORMATION
Device
Operating
Temperature Range Package
MC33169DTB–4.0 TA = –40° to +85°C TSSOP–14
MOTOROLA ANALOG IC DEVICE DATA
© Motorola, Inc. 1998
Rev 2
1