MC14029B_15 Datasheet, PDF (1/8 Pages) ON Semiconductor – Binary/Decade Up/Down Counter

MC14029B
Binary/Decade Up/Down
Counter
The MC14029B Binary/Decade up/down counter is constructed
with MOS P−channel and N−channel enhancement mode devices in
a single monolithic structure. The counter consists of type D flip−flop
stages with a gating structure to provide toggle flip−flop capability.
The counter can be used in either Binary or BCD operation. This
complementary MOS counter finds primary use in up/down and
difference counting and frequency synthesizer applications where low
power dissipation and/or high noise immunity is desired. It is also
useful in A/D and D/A conversion and for magnitude and sign
generation.
Features
• Diode Protection on All Inputs
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• Internally Synchronous for High Speed
• Logic Edge−Clocked Design − Count Occurs on Positive Going Edge
of Clock
• Asynchronous Preset Enable Operation
• Capable of Driving Two Low−Power TTL Loads or One Low−Power
Schottky TTL Load Over the Rated Temperature Range
• Pin for Pin Replacement for CD4029B
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• This Device is Pb−Free and is RoHS Compliant
www.onsemi.com
SOIC−16
D SUFFIX
CASE 751B
MARKING DIAGRAM
16
14029BG
AWLYWW
1
A
WL
YY, Y
WW
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Indicator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
MAXIMUM RATINGS (Voltages Referenced to V_SS)
Symbol
Parameter
Value
Unit
V_DD
DC Supply Voltage Range
−0.5 to +18.0
V
V_in, V_out
Input or Output Voltage Range (DC or Transient)
−0.5 to V_DD + 0.5
V
I_in, I_out
Input or Output Current (DC or Transient) per Pin
±10
mA
P_D
Power Dissipation, per Package (Note 1)
500
mW
T_A
Ambient Temperature Range
−55 to +125
°C
T_stg
Storage Temperature Range
−65 to +150
°C
T_L
Lead Temperature (8−Second Soldering)
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Temperature Derating: “D/DW” Packages: –7.0 mW/_C From 65_C To 125_C
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be
taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, V_in and V_out
should be constrained to the range V_SS ≤ (V_in or V_out) ≤ V_DD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either V_SS or V_DD). Unused outputs must be left open.
© Semiconductor Components Industries, LLC, 2015
1
March, 2015 − Rev. 10
Publication Order Number:
MC14029B/D