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MC14015B_14 Datasheet, PDF (1/8 Pages) ON Semiconductor – Dual 4-Bit Static Shift Register | |||
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MC14015B
Dual 4-Bit Static
Shift Register
The MC14015B dual 4âbit static shift register is constructed with
MOS PâChannel and NâChannel enhancement mode devices in
a single monolithic structure. It consists of two identical, independent
4âstate serialâinput/parallelâoutput registers. Each register has
independent Clock and Reset inputs with a single serial Data input.
The register states are type D masterâslave flipâflops. Data is shifted
from one stage to the next during the positiveâgoing clock transition.
Each register can be cleared when a high level is applied on the Reset
line. These complementary MOS shift registers find primary use in
buffer storage and serialâtoâparallel conversion where low power
dissipation and/or noise immunity is desired.
Features
⢠Diode Protection on All Inputs
⢠Supply Voltage Range = 3.0 Vdc to 18 Vdc
⢠Logic EdgeâClocked FlipâFlop Design
⢠Logic State is Retained Indefinitely with Clock Level either High or
Low; Information is Transferred to the Output only on the
Positive-going Edge of the Clock Pulse
⢠Capable of Driving Two Lowâpower TTL Loads or One Lowâpower
Schottky TTL Load Over the Rated Temperature Range
⢠NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECâQ100
Qualified and PPAP Capable
⢠This Device is PbâFree and is RoHS Compliant
http://onsemi.com
SOICâ16
D SUFFIX
CASE 751B
MARKING DIAGRAM
16
14015BG
AWLYWW
1
A
WL, L
YY, Y
WW, W
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= PbâFree Indicator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
MAXIMUM RATINGS (Voltages Referenced to VSS)
Symbol
Parameter
Value
Unit
VDD
Vin, Vout
DC Supply Voltage Range
Input or Output Voltage Range
(DC or Transient)
â0.5 to +18.0
V
â0.5 to VDD + 0.5
V
Iin, Iout
Input or Output Current
(DC or Transient) per Pin
±10
mA
PD
Power Dissipation, per Package (Note 1)
TA
Ambient Temperature Range
Tstg
Storage Temperature Range
TL
Lead Temperature
(8âSecond Soldering)
500
mW
â55 to +125
°C
â65 to +150
°C
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Temperature Derating: âD/DWâ Package: â7.0 mW/_C From 65_C To 125_C
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be
taken to avoid applications of any voltage higher than maximum rated voltages to this highâimpedance circuit. For proper operation, Vin and Vout
should be constrained to the range VSS ⤠(Vin or Vout) ⤠VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open.
© Semiconductor Components Industries, LLC, 2014
1
July, 2014 â Rev. 9
Publication Order Number:
MC14015B/D
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