MBV109T1 Datasheet, PDF (1/8 Pages) ON Semiconductor – Silicon Epicap Diodes

ON Semiconductort
Silicon Epicap Diodes
Designed for general frequency control and tuning applications;
providing solid–state reliability in replacement of mechanical tuning
methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
MAXIMUM RATINGS
Rating
Symbol MBV109T1 MMBV109LT1 MV209 Unit
Reverse Voltage
V_R
Forward Current
I_F
Forward Power Dissipation
P_D
@ T_A = 25°C
280
Derate above 25°C
2.8
30
200
200
2.0
Vdc
mAdc
200
mW
1.6 mW/°C
Junction Temperature
T_J
+125
°C
Storage Temperature Range T_stg
–55 to +150
°C
DEVICE MARKING
MBV109T1 = J4A, MMBV109LT1 = M4A, MV209 = MV209
MBV109T1
MMBV109LT1 ^*
MV209*
* ON Semiconductor Preferred Devices
26–32 pF
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
1
2
CASE 419–04, STYLE 3
SC–70/SOT–323
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max
Reverse Breakdown Voltage (I_R = 10
µAdc)
V_(BR)R
30
—
—
Reverse Voltage Leakage Current (V_R =
I_R
25 Vdc)
—
—
0.1
Unit
Vdc
µAdc
1
2
CASE 182–06, STYLE 1
TO–92 (TO–226AC)
Diode Capacitance Temperature
Coefficient
(V_R = 3.0 Vdc, f = 1.0 MHz)
TC_C
—
300
— ppm/°
C
Device
MBV109T1,
MMBV109LT1,
MV209
C_t, Diode Capacitance
V_R = 3.0 Vdc, f = 1.0 MHz
pF
Min
Nom
Max
26
29
32
Q, Figure of
Merit
V_R = 3.0
Vdc
f = 50 MHz
C_R, Capacitance
Ratio
C₃/C₂₅
f = 1.0 MHz (Note
1)
Min
Min
Max
200
5.0
6.5
3
1
Cathode
Anode
SC–70/SOT–323
3
1
Cathode
Anode
SOT–23
2
1
Cathode
Anode
TO–92
1. C_R is the ratio of C_t measured at 3 Vdc divided by C_t measured at 25 Vdc.
MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 1
Publication Order Number:
MBV109T1/D