MBT2222ADW1 Datasheet, PDF (1/6 Pages) ON Semiconductor – General Purpose Transistor

MBT2222ADW1,
NSVBT2222ADW1
General Purpose Transistor
NPN Silicon
Features
• Moisture Sensitivity Level: 1
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Electrostatic Discharge
V_CEO
V_CBO
V_EBO
I_C
ESD
40
Vdc
75
Vdc
6.0
Vdc
600
mAdc
HBM Class 2
MM Class B
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Package Dissipation (Note 1),
T_A = 25°C
Thermal Resistance,
Junction−to−Ambient
P_D
R_qJA
150
mW
833
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
http://onsemi.com
(3)
(2)
(1)
Q₁
Q₂
(4)
(5)
(6)
1
SC−88/SC70−6/SOT−363
CASE 419B
STYLE 1
MARKING DIAGRAM
6
1P M G
G
1
1P
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping^†
MBT2222ADW1T1G
SOT−363
3000 /
(Pb−Free) Tape & Reel
NSVBT2222ADW1T1G SOT−363
3000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
September, 2013 − Rev. 5
Publication Order Number:
MBT2222ADW1T1/D