MBRS540T3_05 Datasheet, PDF (1/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRS540T3
Preferred Device
Surface Mount Schottky
Power Rectifier
The MBRS540T3 employs the Schottky Barrier principle in a large
area metal−to−silicon power diode. State−of−the−art geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes in
surface mount applications where compact size and weight are critical
to the system.
Features
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guard−Ring for Stress Protection
• Pb−Free Package is Available
Mechanical Characteristics
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 217 mg (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Notch in Plastic Body Indicates Cathode Lead
• ESD Rating: Machine Model, C (> 400 V)
Human Body Model, 3B (> 8000 V)
• Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V_R, T_C = 105°C)
V_RRM
40
V
V_RWM
V_R
I_F(AV)
5
A
Peak Repetitive Forward Current
(At Rated V_R, Square Wave,
20 KHz, T_C = 80°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I_FRM
I_FSM
10
A
190
A
Storage Temperature Range
Tstg −65 to +150 °C
Operating Junction Temperature (Note 1)
T_J −65 to +150 °C
Voltage Rate of Change (Rated V_R)
dv/dt
10,000 V/ms
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP_D/dT_J < 1/R_qJA.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
5.0 AMPERES, 40 VOLTS
SMC
CASE 403
PLASTIC
MARKING DIAGRAM
AYWW
B540G
G
B540 = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
MBRS540T3
SMC
2500/Tape & Reel
MBRS540T3G
SMC
2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
1
November, 2005 − Rev. 5
Publication Order Number:
MBRS540T3/D