MBRS3100T3_06 Datasheet, PDF (1/4 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRS3100T3
Preferred Device
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Features
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guard−Ring for Stress Protection
• Pb−Free Package is Available
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 217 mg (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Notch in Plastic Body Indicates Cathode Lead
• ESD Ratings: Machine Model = C
Human Body Model = 3B
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
100
V
V_RWM
V_R
Average Rectified Forward Current
(At Rated V_R, T_L = 100°C)
I_F(AV)
3.0
A
Nonrepetitive Peak Surge Current
I_FSM
130
A
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
Operating Junction Temperature Range
(Note 1)
T_J
− 65 to +175 °C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Lead
R_qJL
11
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP_D/dT_J < 1/R_qJA.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES, 100 VOLTS
SMC
CASE 403
PLASTIC
MARKING DIAGRAM
AYWW
B310G
G
B310 = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MBRS3100T3
Package
SMC
Shipping^†
2500/Tape & Reel
MBRS3100T3G
SMC
2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 2
Publication Order Number:
MBRS3100T3/D