MBRS230LT3 Datasheet, PDF (1/4 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRS230LT3
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
. . . employing the Schottky Barrier principle in a metal-to-silicon
power rectifier. Features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high
frequency switching power supplies; free wheeling diodes and
polarity protection diodes.
• Compact Package with J-Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guardring for Over-Voltage Protection
• Low Forward Voltage Drop
Mechanical Characteristics:
• Case: Molded Epoxy
• Epoxy Meets UL94, VO at 1/8″
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Maximum Temperature of 260°C/10 Seconds for Soldering
• Available in 12 mm Tape, 2500 Units per 13″ Reel, Add “T3” Suffix
to Part Number
• Cathode Polarity Band
• Marking: 2BL3
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES
30 VOLTS
SMB
CASE 403A
PLASTIC
MARKING DIAGRAM
YWW
2BL3
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V_R, T_C = 110°C)
Peak Repetitive Forward Current
(At Rated V_R, Square Wave,
20 kHz, T_C = 105°C)
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions, Halfwave, Single
Phase, 60 Hz)
Storage/Operating Case
Temperature
Operating Junction Temperature
Voltage Rate of Change
(Rated V_R, T_J = 25°C)
Symbol
V_RRM
V_RWM
V_R
I_O
I_FRM
Value
30
2.0
4.0
Unit
V
A
A
I_FSM
40
A
T_stg, T_C -55 to +175 °C
T_J
dv/dt
-55 to +125 °C
10,000
V/ms
Y = Year
WW= Work Week
2BL3 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
MBRS230LT3
SMB
2500/Tape & Reel
© Semiconductor Components Industries, LLC, 2003
1
April, 2003 - Rev. 2
Publication Order Number:
MBRS230LT3/D