MBRS130T3G Datasheet, PDF (1/3 Pages) ON Semiconductor – Surface Mount hottky Power Rectifier

MBRS130T3G,
NRVBS130T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop (0.6 Volts Max @ 1.0 A, T_J = 25°C)
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guardring for Stress Protection
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free Devices
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped in 12 mm Tape and Reel, 2500 units per reel
• Cathode Polarity Band
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(T_L = 115°C)
V_RRM
30
V
V_RWM
V_R
I_F(AV)
1.0
A
Non−Repetitive Peak Surge Current
I_FSM
40
A
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature
T_J
−65 to +125 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol Value
Unit
Thermal Resistance, Junction−to−Lead
(T_L = 25°C)
R_qJL
12
°C/W
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
30 VOLTS
SMB
CASE 403A
MARKING DIAGRAM
AYWW
B13G
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MBRS130T3G
Package
Shipping^†
SMB 2500 / Tape & Reel
(Pb−Free)
NRVBS130T3G
SMB 2500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 8
Publication Order Number:
MBRS130T3/D