MBRP20035L Datasheet, PDF (1/2 Pages) Motorola, Inc – SWITCHMODE™ Schottky Power Rectifirer

MBRP20035L
SWITCHMODE™
Schottky Power Rectifier
POWERTAPE III Package
. . . employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency switching
power supplies, free wheeling diode and polarity protection diodes.
• Very Low Forward Voltage Drop
• Highly Stable Oxide Passivated Junction
• Guardring for Stress Protection
• High dv/dt Capability
Mechanical Characteristics:
• Dual Die Construction
• Case: Epoxy, Molded with Plated Copper Heatsink Base
• Weight: 40 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant
• Base Plate Torques: See procedure given in the
Package Outline Section
• Top Terminal Torque: 25−40 lb−in max.
• Shipped 50 units per foam
• Marking: MBRP20035L
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V_R, T_C = 100°C)
Peak Repetitive Forward Current
(At Rated V_R, Square Wave,
20 kHz, T_C = 100°C)
Non−Repetitive Peak Surge Current
(Surge applied at rated load
conditions, halfwave, single phase,
60 Hz)
Peak Repetitive Reverse Surge
Current (2.0 μs, 1.0 kHz)
Storage/Operating Case
Temperature Range
Operating Junction Temperature
Voltage Rate of Change
(Rated V_R, T_J = 25°C)
Symbol
V_RRM
V_RWM
V_R
I_O
I_FRM
I_FSM
I_RRM
T_stg, T_C
T_J
dv/dt
Value
35
200
400
2000
2.0
*55 to +150
*55 to +150
10,000
Unit
V
A
A
A
A
°C
°C
V/μs
http://onsemi.com
SCHOTTKY
BARRIER RECTIFIER
200 AMPERES
35 VOLTS
1
2
1
2
POWERTAP III
CASE 357D
PLASTIC
MARKING DIAGRAM
MBRP20035L
MBRP20035L = Device Code
ORDERING INFORMATION
Device
Package
Shipping
MBRP20035L POWERTAP III 50 Units/Foam
© Semiconductor Components Industries, LLC, 2006
1
September, 2006 − Rev. 2
Publication Order Number:
MBRP20035L/D