MBRJ20200CTG Datasheet, PDF (1/5 Pages) ON Semiconductor – Schottky Power Rectifier

MBRJ20200CTG
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SWITCHMODE
Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier
principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use as
rectifiers in very low−voltage, high−frequency switching power
supplies, free wheeling diodes and polarity protection diodes.
Features
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
• Matched Dual Die Construction
• High Junction Temperature Capability
• High dv/dt Capability
• Guardring for Stress Protection
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Electrically Isolated. No Isolation Hardware Required.
• This is a Pb−Free Device
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 200 VOLTS
1
2
3
1
23
TO−220 FULLPAK]
CASE 221AH
CT SUFFIX
MARKING DIAGRAM
AYWW
B20200G
AKA
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
A
Y
WW
B20200
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Polarity Designator
ORDERING INFORMATION
Device
Package
Shipping
MBRJ20200CTG TO−220
(Pb−Free)
50 Units/Rail
© Semiconductor Components Industries, LLC, 2012
1
November, 2012 − Rev. P0
Publication Order Number:
MBRJ20200CT/D