MBRF2060CT Datasheet, PDF (1/4 Pages) Motorola, Inc – SWITCHMODE™ Schottky Power Rectifirer

MBRF2060CT
SWITCHMODEt
Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier
principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use as
rectifiers in very low−voltage, high−frequency switching power
supplies, free wheeling diodes and polarity protection diodes.
Features
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
• Matched Dual Die Construction
• High Junction Temperature Capability
• High dv/dt Capability
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guardring for Stress Protection
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Electrically Isolated. No Isolation Hardware Required.
• Pb−Free Package is Available*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 60 VOLTS
1
2
3
1
23
ISOLATED TO−220
CASE 221D
STYLE 3
MARKING DIAGRAM
AYWW
B2060G
AKA
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
A
= Assembly Location
Y
= Year
WW = Work Week
B2060 = Device Code
G
= Pb−Free Package
AKA = Polarity Designator
ORDERING INFORMATION
Device
Package
Shipping
MBRF2060CT TO−220FP 50 Units/Rail
MBRF2060CTG TO−220FP
(Pb−Free)
50 Units/Rail
© Semiconductor Components Industries, LLC, 2009
1
December, 2009 − Rev. 8
Publication Order Number:
MBRF2060CT/D