MBRF20100CTG Datasheet, PDF (1/4 Pages) ON Semiconductor – Switch-mode Schottky Power Rectifier

MBRF20100CTG
Switch-mode
Schottky Power Rectifier
The Switch−mode Power Rectifier employs the Schottky Barrier
principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use as
rectifiers in very low−voltage, high−frequency switching power
supplies, free wheeling diodes and polarity protection diodes.
Features
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
• Matched Dual Die Construction
• High Junction Temperature Capability
• High dv/dt Capability
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guardring for Stress Protection
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Electrically Isolated. No Isolation Hardware Required.
• These are Pb−Free Devices
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 100 VOLTS
1
2
3
1
2
3
TO−220 FULLPAKt
CASE 221AH
ORDERING AND MARKING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
July, 2016 − Rev. 10
Publication Order Number:
MBRF20100CT/D