MBRF1545CT Datasheet, PDF (1/4 Pages) Motorola, Inc – SWITCHMODE™ Schottky Power Rectifirers

MBRF1545CT
SWITCHMODE™
Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier
principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use as
rectifiers in very low−voltage, high−frequency switching power
supplies, free wheeling diodes and polarity protection diodes.
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
• Matched Dual Die Construction
• High Junction Temperature Capability
• High dv/dt Capability
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guardring for Stress Protection
• Epoxy Meets UL94, VO at 1/8″
• Electrically Isolated. No Isolation Hardware Required.
• UL Recognized File #E69369⁽¹⁾
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10
Seconds
• Shipped 50 units per plastic tube
• Marking: B1545
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
15 AMPERES, 45 VOLTS
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2
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CASE 221D−02
ISOLATED TO−220
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2
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© Semiconductor Components Industries, LLC, 2006
1
September, 2006 − Rev. 2
Publication Order Number:
MBRF1545CT/D