MBRB1045_10 Datasheet, PDF (1/6 Pages) ON Semiconductor – SWITCHMODE Schottky Power Rectifier

MBRB1045, MBRD1045
Preferred Device
SWITCHMODEt
Schottky Power Rectifier
Surface Mount Power Package
This series of Power Rectifiers employs the Schottky Barrier
principle in a large metal−to−silicon power diode. State−of−the−art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, free wheeling diodes, and
polarity protection diodes.
Features
• Guardring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Short Heat Sink Tab Manufactured − Not Sheared!
• Pb−Free Packages are Available
Mechanical Characteristics:
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
• Weight: 1.7 grams for D²PAK (approximately)
0.4 grams for DPAK (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL1 Requirements
• ESD Ratings: Machine Model, C (>400 V)
Human Body Model, 3B (>8000 V)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
45
V
V_RWM
V_R
Average Rectified Forward Current
I_F(AV)
10
A
(Rated V_R) T_C = 135°C
Peak Repetitive Forward Current
I_FRM
20
A
(Rated V_R, Square Wave, 20 kHz)
T_C = 135°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
I_FSM
150 (MBRB)
A
70 (MBRD)
Operating Junction and Storage
Temperature Range (Note 1)
T_J, T_stg −65 to +175 °C
Voltage Rate of Change (Rated V_R)
dv/dt
10000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP_D/dT_J < 1/R_qJA.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
10 AMPERES, 45 VOLTS
1
4
3
MARKING DIAGRAM
4
AY WW
1
3
D²PAK
CASE 418B
PLASTIC
MBRB1045G
AKA
A
= Assembly Location
Y
= Year
WW
= Work Week
MBRB1045 = Device Code
G
= Pb−Free Package
AKA
= Diode Polarity
4
MARKING DIAGRAM
12
3
DPAK
CASE 369C
YWW
B10
45G
Y
WW
B1045
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2010
1
July, 2010 − Rev. 7
Publication Order Number:
MBRB1045/D