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MBRAF1100T3G_16 Datasheet, PDF (1/4 Pages) ON Semiconductor – Schottky Power Rectifier
MBRAF1100T3G
Schottky Power Rectifier
Surface Mount Power Package
Schottky Power Rectifiers employ the use of the Schottky Barrier
principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage,
high frequency rectification, or as free wheeling and polarity
protection diodes, in surface mount applications where compact size
and weight are critical to the system. These state−of−the−art devices
have the following features:
Features
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• High Blocking Voltage − 100 V
• 150°C Operating Junction Temperature
• Guardring for Stress Protection
• This is a Pb−Free Device
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped in 12 mm Tape and Reel, 5000 Units per Reel
• Cathode Polarity Band
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
TL = 130°C
VRRM
V
VRWM
VR
100
IF(AV)
A
1.0
Non−Repetitive Peak Surge Current
IFSM
50
A
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature (Note 1)
Voltage Rate of Change
TJ
dv/dt
−65 to +150 °C
10
V/ns
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
100 VOLTS
SMA−FL
CASE 403AA
STYLE 6
MARKING DIAGRAM
RAD
AYWWG
RAD
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
November, 2016 − Rev. 1
Publication Order Number:
MBRAF1100T3/D