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MBRAF1100T3G Datasheet, PDF (1/4 Pages) ON Semiconductor – Schottky Power Rectifier | |||
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MBRAF1100T3G
Schottky Power Rectifier
Surface Mount Power Package
Schottky Power Rectifiers employ the use of the Schottky Barrier
principle in a large area metalâtoâsilicon power diode.
Stateâofâtheâart geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage,
high frequency rectification, or as free wheeling and polarity
protection diodes, in surface mount applications where compact size
and weight are critical to the system. These stateâofâtheâart devices
have the following features:
Features
⢠Rectangular Package for Automated Handling
⢠Highly Stable Oxide Passivated Junction
⢠High Blocking Voltage â 100 V
⢠150°C Operating Junction Temperature
⢠Guardring for Stress Protection
⢠This is a PbâFree Device
Mechanical Characteristics
⢠Case: Epoxy, Molded
⢠Weight: 95 mg (approximately)
⢠Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
⢠Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
⢠Shipped in 12 mm Tape and Reel, 5000 Units per Reel
⢠Cathode Polarity Band
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
V
VRWM
VR
100
Average Rectified Forward Current
TL = 130°C
IF(AV)
A
1.0
NonâRepetitive Peak Surge Current
IFSM
50
A
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature (Note 1)
TJ
â65 to +150 °C
Voltage Rate of Change
dv/dt
10
V/ns
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
JunctionâtoâAmbient: dPD/dTJ < 1/RqJA.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
100 VOLTS
SMAâFL
CASE 403AA
PLASTIC
STYLE 6
MARKING DIAGRAM
AYWW
RADG
RAD
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= PbâFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
July, 2012 â Rev. 0
Publication Order Number:
MBRAF1100T3/D
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