MBR3100_06 Datasheet, PDF (1/4 Pages) ON Semiconductor – Axial Lead Rectifier

MBR3100
Preferred Device
Axial Lead Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
• Low Reverse Current
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
• Guard−ring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• High Surge Capacity
• Pb−Free Packages are Available*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.1 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Cathode indicated by Polarity Band
MAXIMUM RATINGS
Rating
Symbol Max Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
100
V
V_RWM
V_R
Average Rectified Forward Current T_A = 100°C I_O
(R_qJA = 28°C/W, Refer to P.C. Board Mounting,
Note 3)
3.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I_FSM
150
A
Operating and Storage Junction Temperature T_J, T_stg −65 to °C
Range (Note 1) (Reverse Voltage Applied)
+175
Voltage Rate of Change (Rated V_R)
dv/dt
10
V/ns
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP_D/dT_J < 1/R_qJA.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
June, 2006 − Rev. 6
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES, 100 VOLTS
AXIAL LEAD
CASE 267−05
(DO−201AD)
STYLE 1
MARKING DIAGRAM
A
MBR
3100
YYWWG
G
A
= Assembly Location
YY
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
MBR3100
Axial Lead 500 Units / Bag
MBR3100G
MBR3100RL
Axial Lead
(Pb−Free)
Axial Lead
500 Units / Bag
1500/Tape & Reel
MBR3100RLG Axial Lead 1500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MBR3100/D