MBR2080CT Datasheet, PDF (1/4 Pages) ON Semiconductor – SWITCHMODE™ Power Rectifiers

MBR2080CT, MBR2090CT,
MBR20100CT
SWITCHMODE™
Power Rectifiers
This series uses the Schottky Barrier principle with a platinum
barrier metal. These state−of−the−art devices have the following
features:
Features
• 20 A Total (10 A Per Diode Leg)
• Guard−Ring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Low Power Loss/High Efficiency
• High Surge Capacity
• Low Stored Charge Majority Carrier Conduction
• Shipped 50 units per plastic tube
• Pb−Free Packages are Available*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
80−100 VOLTS
1
2, 4
3
4
TO−220AB
CASE 221A
PLASTIC
1
2
3
MARKING DIAGRAM
AY WW
B20x0G
AKA
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
1
September, 2009 − Rev. 0
A
= Assembly Location
Y
= Year
WW = Work Week
B20x0 = Device Code
x
= 8, 9 or 10
G
= Pb−Free Device
AKA = Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MBR20100CT/D