MBR2030CTLG Datasheet, PDF (1/5 Pages) ON Semiconductor – Switch-mode Dual Schottky Power Rectifier

MBR2030CTLG
Switch-mode
Dual Schottky
Power Rectifier
Features and Benefits
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop (0.4 Max @ 10 A, T_C = 150°C)
• High Junction Temperature
• High dv/dt Capability
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Low Power Loss/High Efficiency
• High Surge Capacity
• 175°C Operating Junction Temperature
• 20 A Total (10 A Per Diode Leg)
• This Device is Pb−Free and is RoHS Compliant*
Applications
• Power Supply − Output Rectification
• Power Management − ORING
• Instrumentation
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Sec
• ESD Rating: Human Body Model 3B
Machine Model C
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 30 VOLTS
1
2, 4
3
MARKING
DIAGRAM
4
1
2
3
TO−220
CASE 221A
STYLE 6
AYWW
B2030LG
AKA
A
Y
WW
B2030L
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
Device
MBR2030CTLG
Package
TO−220
(Pb−Free)
Shipping
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 5
Publication Order Number:
MBR2030CTL/D