MBR2030CTL Datasheet, PDF (1/6 Pages) Inchange Semiconductor Company Limited – Schottky Barrier Rectifier

MBR2030CTL
Preferred Device
SWITCHMODE™ Dual
Schottky Power Rectifier
The MBR2030CTL employs the Schottky Barrier principle in a
large area metal−to−silicon power diode. State−of−the−art geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for use as rectifiers in very
low−voltage, high−frequency switching power supplies, free wheeling
diodes and polarity protection diodes.
Features
• Pb−Free Package is Available*
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop (0.4 Max @ 10 A, T_C = 150°C)
• 150°C Operating Junction Temperature
• Matched Dual Die Construction (10 A per Leg or 20 A per Package)
• High Junction Temperature Capability
• High dv/dt Capability
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guardring for Stress Protection
• Epoxy Meets UL 94, V−0 @ 0.125 in
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES
30 VOLTS
1
2, 4
3
MARKING
DIAGRAM
4
TO−220AB
CASE 221A
PLASTIC
AY WW
B2030
1
2
3
A
Y
WW
B2030
= Assembly Location
= Year
= Work Week
= Device Code
ORDERING INFORMATION
Device
Package
Shipping
MBR2030CTL
TO−220
50 Units/Tube
MBR2030CTLG TO−220
(Pb−Free)
50 Units/Tube
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2004
1
September, 2004 − Rev. 2
Publication Order Number:
MBR2030CTL/D