MBR1100_16 Datasheet, PDF (1/4 Pages) ON Semiconductor – Axial Lead Rectifier

MBR1100
Axial Lead Rectifier
These rectifiers employ the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
• Low Reverse Current
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
• Guard−Ring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• High Surge Capacity
• These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Cathode Indicated by Polarity Band
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(V_R(equiv) ≤ 0.2 V_R (dc), R_qJA = 50°C/W,
P.C. Board Mounting, [see Note 3], T_A = 120°C)
Peak Repetitive Forward Current
(V_R(equiv) ≤ 0.2 V_R (dc), R_qJA = 50°C/W,
P.C. Board Mounting, [see Note 3], T_A = 110°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Symbol
V_RRM
V_RWM
V_R
I_O
I_FRM
I_FSM
Value
100
1.0
2.0
50
Unit
V
A
A
A
Operating and Storage Junction Temperature T_J, T_stg −65 to °C
Range (Note 1)
+175
Voltage Rate of Change (Rated V_R)
dv/dt
10 V/ns
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP_D/dT_J < 1/R_qJA.
www.onsemi.com
SCHOTTKY
BARRIER RECTIFIER
1.0 AMPERE, 100 VOLTS
DO−41
AXIAL LEAD
CASE 59
STYLE 1
MARKING DIAGRAM
A
MBR1100
YYWW G
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MBR1100G
Package
Axial Lead
(Pb−Free)
Shipping^†
1000 Units/Bag
MBR1100RLG
Axial Lead 5000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
February, 2016 − Rev. 7
Publication Order Number:
MBR1100/D