MBR1100 Datasheet, PDF (1/4 Pages) ON Semiconductor – SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 100 VOLTS

MBR1100
Preferred Device
Axial Lead Rectifier
. . . employing the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low- voltage,
high- frequency inverters, free wheeling diodes, and polarity
protection diodes.
• Low Reverse Current
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
• Guard-Ring for Stress Protection
• Low Forward Voltage
• 150°C Operating Junction Temperature
• High Surge Capacity
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16″ from case
• Shipped in plastic bags, 1000 per bag
• Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to
the part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: B1100
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(V_R(equiv) ≤ 0.2 V_R(dc), R_qJA =
50°C/W, P.C. Board Mounting, see
Note 1, T_A = 120°C)
Non-Repetitive Peak
Surge Current (Surge Applied at
Rated Load Conditions Halfwave,
Single Phase, 60 Hz)
Operating and Storage Junction
Temperature Range
Voltage Rate of Change (Rated V_R)
Symbol
V_RRM
V_RWM
V_R
I_O
I_FSM
T_J, T_stg
dv/dt
Max
100
1.0
50
-65 to +150
10
Unit
V
A
A
°C
V/ns
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
100 VOLTS
AXIAL LEAD
CASE 59-10
DO-41
PLASTIC
MARKING DIAGRAM
MBR
1100
MBR1100 = Device Code
ORDERING INFORMATION
Device
Package
Shipping
MBR1100
Axial Lead 1000 Units/Bag
MBR1100RL Axial Lead 5000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
1
April, 2003 - Rev. 4
Publication Order Number:
MBR1100/D