MBD301G Datasheet, PDF (1/5 Pages) ON Semiconductor – Silicon Hot-Carrier Diodes

MBD301G, MMBD301LT1G
Silicon Hot-Carrier Diodes
SCHOTTKY Barrier Diodes
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
• Very Low Capacitance − 1.5 pF (Max) @ V_R = 15 V
• Low Reverse Leakage − I_R = 13 nAdc (Typ) MBD301, MMBD301
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
MBD301 MMBD301LT1
Rating
Symbol
Value
Unit
Reverse Voltage
Total Device Dissipation
@ T_A = 25°C
Derate above 25°C
V_R
30
V
P_F
280
2.8
200
mW
2.0
mW/°C
Operating Junction
Temperature Range
T_J
−55 to +125
°C
Storage Temperature Range
T_stg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 VOLTS
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
MBD301
MARKING
DIAGRAM
TO−92
MBD
(TO−226AC)
301
CASE 182
AYWWG
STYLE 1
G
1
2
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
2
CATHODE
1
ANODE
MMBD301LT1
MARKING
DIAGRAM
3
1
2
SOT−23
(TO−236)
CASE 318
STYLE 8
4T M G
G
1
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
3
CATHODE
1
ANODE
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 5
Publication Order Number:
MBD301/D