MBD110DWT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – Dual Schottky Barrier Diodes

ON Semiconductort
Dual Schottky Barrier Diodes
Application circuit designs are moving toward the consolidation of
device count and into smaller packages. The new SOT–363 package is
a solution which simplifies circuit design, reduces device count, and
reduces board space by putting two discrete devices in one small
six–leaded package. The SOT–363 is ideal for low–power surface
mount applications where board space is at a premium, such as
portable products.
Surface Mount Comparisons:
Area (mm2)
Max Package PD (mW)
Device Count
SOT–363
4.6
120
2
SOT–23
7.6
225
1
Space Savings:
Package
SOT–363
1  SOT–23
40%
2  SOT–23
70%
The MBD110DW, MBD330DW, and MBD770DW devices are
spin–offs of our popular MMBD101LT1, MMBD301LT1, and
MMBD701LT1 SOT–23 devices. They are designed for
high–efficiency UHF and VHF detector applications. Readily
available to many other fast switching RF and digital applications.
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance
• Low Reverse Leakage
MBD110DWT1
MBD330DWT1
MBD770DWT1
ON Semiconductor Preferred Devices
6 ₅₄
123
CASE 419B–01, STYLE 6
SOT–363
Anode 1
N/C 2
Cathode 3
6 Cathode
5 N/C
4 Anode
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
MBD110DWT1
VR
MBD330DWT1
MBD770DWT1
7.0
Vdc
30
70
Forward Power Dissipation
TA = 25°C
Junction Temperature
Storage Temperature Range
PF
120
mW
TJ
–55 to +125
°C
Tstg
–55 to +150
°C
DEVICE MARKING
MBD110DWT1 = M4
MBD330DWT1 = T4
MBD770DWT1 = H5
Thermal Clad is a trademark of the Bergquist Company.
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev.3
Publication Order Number:
MBD110DWT1/D