MBD101 Datasheet, PDF (1/4 Pages) ON Semiconductor – SILICON SCHOTTKY BARRIER DIODES

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Schottky Barrier Diodes
Designed primarily for UHF mixer applications but suitable also for use in detector
and ultra–fast switching circuits. Supplied in an inexpensive plastic package for
low–cost, high–volume consumer requirements. Also available in Surface Mount
package.
• Low Noise Figure — 6.0 dB Typ @ 1.0 GHz
• Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
• High Forward Conductance — 0.5 Volts (Typ) @ IF = 10 mA
Order this document
by MBD101/D
MBD101
MMBD101LT1
Motorola Preferred Devices
SILICON SCHOTTKY
BARRIER DIODES
2
CATHODE
1
ANODE
3
CATHODE
1
ANODE
1
2
CASE 182– 02, STYLE 1
(TO–226AC)
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBD101LT1 = 4M
Symbol
VR
PF
TJ
Tstg
MBD101 MMBD101LT1
Value
7.0
Unit
Volts
280
225
2.2
1.8
+150
– 55 to +150
mW
mW/°C
°C
°C
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Reverse Breakdown Voltage
(IR = 10 µAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz, Note 1)
Forward Voltage(1)
(IF = 10 mAdc)
Reverse Leakage
(VR = 3.0 Vdc)
V(BR)R
7.0
CT
—
VF
—
IR
—
10
—
0.88
1.0
0.5
0.6
0.02
0.25
NOTE: MMBD101LT1 is also available in bulk packaging. Use MMBD101L as the device title to order this device in bulk.
Unit
Volts
pF
Volts
µAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Berquist Company.
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