M1MA174T1 Datasheet, PDF (1/8 Pages) ON Semiconductor – Silicon Switching Diode

M1MA174T1
Preferred Device
Silicon Switching Diode
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
100
V
Recurrent Peak Forward Current
IF
200
mA
Peak Forward Surge Current
Pulse Width = 10 µs
IFM(surge)
500
mA
Total Power Dissipation,
One Diode Loaded
PD
200
mW
TA = 25°C
Derate above 25°C
1.6
mW/°C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to
°C
+150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
R_θJA
0.625
°C/mW
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
Reverse Breakdown Voltage
(IR = 100 µAdc)
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 10 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
V(BR) 100
–
Vdc
IR
–
25 nAdc
–
5.0 µAdc
CT
–
4.0 pF
VF
–
1.0 Vdc
trr
–
4.0 ns
http://onsemi.com
3
CATHODE
1
ANODE
3
1
2
SC–70/SOT–323
CASE 419
STYLE 2
MARKING DIAGRAM
J6 M
J6 = Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
M1MA174T1
SC–70
3000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 1
Publication Order Number:
M1MA174T1/D