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M1MA151KT1_12 Datasheet, PDF (1/3 Pages) ON Semiconductor – Single Silicon Switching Diodes
M1MA151KT1,
M1MA152KT1
Preferred Device
Single Silicon Switching
Diodes
These Silicon Epitaxial Planar Diodes are designed for use in ultra
high speed switching applications. These devices are housed in the
SC−59 package which is designed for low power surface mount
applications.
Features
• Fast trr, < 3.0 ns
• Low CD, < 2.0 pF
• Available in 8 mm Tape and Reel
Use M1MA151/2KT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel.
• Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Reverse Voltage
M1MA151KT1
VR
M1MA152KT1
40
Vdc
80
Peak Reverse Voltage M1MA151KT1 VRM
M1MA152KT1
40
Vdc
80
Forward Current
Peak Forward Current
Peak Forward Surge Current
IF
IFM
IFSM
(Note 1)
100
mAdc
225
mAdc
500
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
−55 to + 150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. t = 1 SEC
http://onsemi.com
SC−59 PACKAGE SINGLE
SILICON SWITCHING DIODES
40/80 V−100 mA
SURFACE MOUNT
3 CATHODE
1
ANODE
2
NO CONNECTION
SC−59
CASE 318D
MARKING DIAGRAM
Mx M G
1
Mx
= Device Code
x
= H for 151
I for 152
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2012
1
July, 2012 − Rev. 8
Publication Order Number:
M1MA151KT1/D