M1MA141KT1G Datasheet, PDF (1/4 Pages) ON Semiconductor – Single Silicon Switching Diode

M1MA141KT1G,
M1MA142KT1G
Single Silicon Switching
Diode
This Silicon Epitaxial Planar Diode is designed for use in ultra high
speed switching applications. This device is housed in the SC--70
package which is designed for low power surface mount applications.
Features
 Fast t_rr, < 3.0 ns
 Low C_D, < 2.0 pF
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_A = 25C)
Rating
Symbol
Value
Unit
Reverse Voltage
V_R
M1MA141KT1
M1MA142KT1
Vdc
40
80
Peak Reverse Voltage
V_RM
M1MA141KT1
M1MA142KT1
Vdc
40
80
Forward Current
Peak Forward Current
Peak Forward Surge Current
I_F
100
mAdc
I_FM
225
mAdc
I_FSM
500
mAdc
(Note 1)
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
P_D
150
mW
Junction Temperature
T_J
150
C
Storage Temperature
T_stg
-- 55 ~ + 150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 sec
http://onsemi.com
CATHODE
3
ANODE NO CONNECTION
1
2
3
1
2
SC--70 (SOT--323)
CASE 419
STYLE 2
MARKING DIAGRAM
Mx M G
G
Mx = Device Code
x = H for 141
I for 142
M = Date Code*
G = Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
M1MA141KT1G
SC--70 3000/Tape & Reel
(Pb--Free)
M1MA142KT1G
SC--70 3000/Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
1
October, 2010 -- Rev. 7
Publication Order Number:
M1MA141KT1/D