KAI-0373 Datasheet, PDF (1/21 Pages) ON Semiconductor – Interline CCD Image Sensor

KAI-0373
768 (H) x 484 (V) Interline
CCD Image Sensor
Description
The KAI−0373 is a high-performance silicon charge-coupled device
(CCD) designed for video image sensing and electronic still
photography. The device is built using an advanced true two-phase,
double-polysilicon, NMOS CCD technology. The p+npn−
photodetector elements eliminate image lag and reduce image smear
while providing anti-blooming protection and electronic-exposure
control. The total chip size is 9.9 (H) mm × 7.7 (V) mm.
The KAI−0373 comes in monochrome versions, with an option with
microlens for sensitivity improvement.
Table 1. GENERAL SPECIFICATIONS
Parameter
Architecture
Typical Value
Interline Transfer CDD;
Progressive Scan
Number of Active Pixels
Number of Outputs
Pixel Size
Active Image Size
768 (H) × 484 (V)
1
11.6 mm(H) × 13.6 mm (V)
8.91 mm (H) × 6.58 mm (V),
11.1 mm (Diagonal),
2/3″ Optical Format
Aspect Ratio
Output Sensitivity
Photometric Sensitivity
KAI−0373−ABA
Charge Capacity
Maximum Pixel Clock Speed
3:2
9 mV/e^−
2.2 V/lux−sec
55 ke^−
14.32 MHz
Maximum Frame Rate
30 fps
Package Type
Package Size
CerDIP
0.800″ [20.32 mm] Width
1.200″ [30.48 mm] Length
Package Pins
24
Package Pin Spacing
0.100″ (2.54 mm)
NOTE: All Parameters are specified at T = 40°C unless otherwise noted.
www.onsemi.com
Figure 1. KAI−0373 Interline
CCD Image Sensor
Features
• High Resolution
• High Sensitivity
• High Dynamic Range
• Low Noise Architecture
• High Frame Rate
• Binning Capability for Higher Frame Rate
• Electronic Shutter
Application
• Intelligent Traffic Systems
• Surveillance
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
March, 2015 − Rev. 4
Publication Order Number:
KAI−0373/D