KAF-6303 Datasheet, PDF (1/14 Pages) ON Semiconductor – Full Frame CCD Image Sensor

KAF-6303
3072 (H) x 2048 (V) Full
Frame CCD Image Sensor
Description
The KAF−6303 Image Sensor is a high performance CCD
(charge-coupled device) with 3072 (H) × 2048 (V) photo active pixels
designed for a wide range of image sensing applications.
The sensor incorporates true two-phase CCD technology,
simplifying the support circuits required to drive the sensor as well as
reducing dark current without compromising charge capacity.
The sensor also utilizes the TRUESENSE Transparent Gate Electrode
to improve sensitivity compared to the use of a standard front side
illuminated polysilicon electrode.
Table 1. GENERAL SPECIFICATIONS
Parameter
Typical Value
Architecture
Full Frame CCD
Total Number of Pixels
3088 (H) × 2056 (V)
Number of Active Pixels
3072 (H) × 2048 (V) = approx. 6.3 Mp
Pixel Size
9 mm (H) × 9 mm (V)
Active Image Size
27.65 mm (H) × 18.48 mm (V)
33.4 mm (Diagonal)
APS−H Optical Format
Chip Size
Saturation Signal
Output Sensitivity
29.0 mm (H) × 19.1 mm (V)
100,000 e^−
10 mV/e^−
Quantum Efficiency
(450, 550, 650 mm)
Readout Noise (10 MHz)
Dark Current
(Accumulation Mode)
40%, 52%, 65%
15 e^− rms
< 10 pA/cm²
Dark Current Doubling Rate
6°C
Dynamic Range
(Saturation Signal/Dark Noise)
76 dB
Maximum Date Rate
10 MHz
Package
CERDIP Package (Sidebrazed)
Cover Glass
Clear or AR Coated, 2 Sides
NOTE: Parameters above are specified at T = 25°C unless otherwise noted.
www.onsemi.com
Figure 1. KAF−6303 Full Frame CCD
Image Sensor
Features
• True Two Phase Full Frame Architecture
• TRUESENSE Transparent Gate Electrode
for High Sensitivity
• 100% Fill Factor
• Low Dark Current
Applications
• Medical Imaging
• Scientific Imaging
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
April, 2015 − Rev. 2
Publication Order Number:
KAF−6303/D