KAF-09000 Datasheet, PDF (1/21 Pages) ON Semiconductor – Full Frame CCD Image Sensor

KAF-09000
3056 (H) x 3056 (V) Full
Frame CCD Image Sensor
Description
Combining high resolution with outstanding sensitivity, the
KAF−09000 image sensor has been specifically designed to meet the
needs of next−generation low cost digital radiography and scientific
imaging systems. The high sensitivity available from 12−micron
square pixels combines with a low noise architecture to allow system
designers to improve overall image quality, or to relax system
tolerances to achieve lower cost. The excellent uniformity of the
KAF−09000 image sensor improves overall image integrity by
simplifying image corrections, while integrated anti−blooming
protection prevents image bleed from over−exposure in bright areas of
the image. To simplify device integration, the KAF−09000 image
sensor uses the same pin−out and package as the KAF−16801 image
sensor.
The sensor utilizes the TRUESENSE Transparent Gate Electrode to
improve sensitivity compared to the use of a standard front−side
illuminated polysilicon electrode.
Table 1. GENERAL SPECIFICATIONS
Parameter
Architecture
Total Number of Pixels
Number of Effective Pixels
Number of Active Pixels
Pixel Size
Active Image Size
Aspect Ratio
Horizontal Outputs
Saturation Signal
Output Sensitivity
Quantum Efficiency (550 nm)
Responsivity (550 nm)
Read Noise (f = 3 MHz)
Dark Signal (T = 25°C)
Dark Current Doubling Temperature
Linear Dynamic Range (f = 4 MHz)
Blooming Protection
(4 ms exposure time)
Maximum Data Rate
Package
Cover Glass
Typical Value
Full Frame CCD [Square Pixels]
3103 (H) x 3086 (V) = 9.6 Mp
3085 (H) x 3085 (V) = 9.5 Mp
3056 (H) x 3056 (V) = 9.3 Mp
12 mm (H) x 12 mm (V)
36.7 mm (H) x 36.7 mm (V)
51.9 mm diagonal,
645 1.3x optical format
Square
1
110 ke^−
24 mV/e^−
64%
2595 ke/mJ/cm²
62.3 V/mJ/cm²
7 e^−
5 e/pix/sec
7°C
84 dB
> 100 X saturation exposure
10 MHz
CERDIP, (sidebrazed pins, CuW)
AR coated 2 sides Taped Clear
NOTE: Parameters above are specified at T = 25°C unless otherwise noted.
© Semiconductor Components Industries, LLC, 2015
1
February, 2015 − Rev. 3
www.onsemi.com
Figure 1. KAF−09000 CCD Image Sensor
Features
• TRUESENSE Transparent Gate Electrode
for High Sensitivity
• Large Pixel Size
• Large Image Area
• High Quantum Efficiency
• Low Noise Architecture
• Broad Dynamic Range
Applications
• Medical
• Scientific
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Publication Order Number:
KAF−09000/D