KAF-0402 Datasheet, PDF (1/16 Pages) ON Semiconductor – FULL FRAME CCD IMAGE SENSOR

KAF-0402
768 (H) x 512 (V) Full Frame
CCD Image Sensor
Description
The KAF−0402 Image Sensor is a high performance area CCD
(charge-coupled device) image sensor with 768 (H) × 512 (V)
photoactive pixels designed for a wide range of image sensing
applications.
The sensor incorporates true two-phase CCD technology,
simplifying the support circuits required to drive the sensor as well as
reducing dark current without compromising charge capacity.
The sensor also utilizes the TRUESENSE Transparent Gate Electrode
to improve sensitivity compared to the use of a standard front side
illuminated polysilicon electrode.
Optional microlenses focus the majority of the light through the
transparent gate, increasing the optical response further.
Table 1. GENERAL SPECIFICATIONS
Parameter
Typical Value
Architecture
Full Frame CCD, Enhanced
Response
Total Number of Pixels
784 (H) × 520 (V)
Number of Active Pixels
768 (H) × 512 (V) = approx. 0.4 Mp
Pixel Size
9.0 mm (H) × 9.0 mm (V)
Active Image Size
6.91 mm (H) × 4.6 mm (V)
8.3 mm (Diagonal)
1/2″ Optical Format
Die Size
8.4 mm (H) × 5.5 mm (V)
Aspect Ratio
3:2
Saturation Signal
100,000 electrons
Quantum Efficiency
(with Microlens)
Peak: 77%
400 nm: 45%
Quantum Efficiency
(No Microlens)
Peak: 65%
400 nm: 30%
Output Sensitivity
10 mV/e^−
Read Noise
Dark Current
15 electrons
< 10 pA/cm² at 25°C
Dark Current Doubling Temperature 6.3°C
Dynamic Range
76 dB
Charge Transfer Efficiency
> 0.99999
Blooming Suppression
None
Maximum Date Rate
10 MHz
Package
CERDIP Package (Sidebrazed)
Cover Glass
Clear or AR Coated, 2 Sides
NOTE: Parameters above are specified at T = 25°C unless otherwise noted.
www.onsemi.com
Figure 1. KAF−0402 Full Frame CCD
Image Sensor
Applications
• Digitization
• Medical
• Scientific
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
April, 2015 − Rev. 2
Publication Order Number:
KAF−0402/D