KAF-0261_16 Datasheet, PDF (1/14 Pages) ON Semiconductor – CCD Image Sensor

KAF-0261
512 (H) x 512 (V) Full Frame
CCD Image Sensor
Description
The KAF−0261 Image Sensor is a high performance, charge
coupled device (CCD) designed for a wide range of image sensing
applications.
The sensor incorporates true two−phase CCD technology,
simplifying the support circuits required to drive the sensor as well as
reducing dark current without compromising charge capacity. The
sensor also utilizes a transparent gate electrode to improve sensitivity
compared to the use of a standard front side illuminated polysilicon
electrode.
Selectable on−chip output amplifiers allow operation to be
optimized for different imaging needs: Low Noise (when using the
high−sensitivity output) or Maximum Dynamic Range (when using
the low−sensitivity output).
The low dark current of the KAF−0261 makes this device suitable
for low light imaging applications without sacrificing charge capacity.
Table 1. GENERAL SPECIFICATIONS
Parameter
Typical Value
Architecture
Full Frame CCD
Number of Active Pixels
512 (H) x 512 (V)
Pixel Size
20 mm (H) x 20 mm (V)
Active Image Size
10.2 mm (H) x 10.2 mm (V)
Chip Size
11.3 mm (H) x 11.6 mm (V)
Optical Fill Factor
100%
Output Sensitivity
High Sensitivity Output
High Dynamic Range Output
10 mV/electron
2.0 mV/electron
Saturation Signal
High Sensitivity Output
High Dynamic Range
200,000 electrons
500,000 electrons
Readout Noise (1 MHz)
Dark Current
(25°C, Accumulation Mode)
22 electrons rms
< 30 pA/cm³
Dark Current Doubling Rate
6°C
Dynamic Range (Sat Sig/Dark Noise)
High Sensitivity Output
83 dB
High Dynamic Range Output Range
87 dB
Quantum Efficiency (450, 550, 650 nm) 35%, 55%, 58%
Maximum Data Rate
High Sensitivity Output
High Dynamic Range Output
5 MHz
2 MHz
Transfer Efficiency
> 0.99997
Package
CERDIP Package
Cover Glass
Clear or AR coated, 2 sides
www.onsemi.com
Figure 1. KAF−0261 CCD Image Sensor
Features
• True Two Phase Full Frame Architecture
• Transparent Gate Electrode for High
Sensitivity
• 100% Fill Factor
• Low Dark Current
• User−selectable Outputs Allow either Low
Noise or High Dynamic Range Operation
• Single Readout Register
• These Devices are Pb−Free and are RoHS
Compliant
Applications
• Scientific Imaging
© Semiconductor Components Industries, LLC, 2016
1
March, 2016 − Rev. 3
Publication Order Number:
KAF−0261/D