J308_06 Datasheet, PDF (1/6 Pages) ON Semiconductor – JFET VHF/UHF Amplifiers

J308
JFET VHF/UHF Amplifiers
N−Channel — Depletion
MAXIMUM RATINGS
Rating
Drain −Source Voltage
Gate−Source Voltage
Forward Gate Current
Total Device Dissipation
@ T_A = 25°C
Derate above 25°C
Junction Temperature Range
Storage Temperature Range
Symbol
Value
Unit
V_DS
25
Vdc
V_GS
25
Vdc
I_GF
10
mAdc
P_D
mW
350
2.8
mW/°C
T_J
−65 to +125 °C
T_stg − 65 to +150 °C
http://onsemi.com
1
23
CASE 29−11, STYLE 5
TO−92 (TO−226AA)
1 DRAIN
3
GATE
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Gate −Source Breakdown Voltage
(I_G = −1.0 μAdc, V_DS = 0)
V_(BR)GSS
Gate Reverse Current
(V_GS = −15 Vdc, V_DS = 0, T_A = 25°C)
(V_GS = −15 Vdc, V_DS = 0, T_A = +125°C)
Gate Source Cutoff Voltage
(V_DS = 10 Vdc, I_D = 1.0 nAdc)
J308
J309
J310
I_GSS
V_GS(off)
ON CHARACTERISTICS
Zero −Gate −Voltage Drain Current⁽¹⁾
(V_DS = 10 Vdc, V_GS = 0)
J308
J309
J310
I_DSS
Gate−Source Forward Voltage
(V_DS = 0, I_G = 1.0 mAdc)
V_GS(f)
Min
− 25
—
—
− 1.0
− 1.0
− 2.0
12
12
24
—
2 SOURCE
Typ
Max
Unit
—
—
Vdc
—
−1.0
nAdc
—
−1.0
μAdc
Vdc
—
− 6.5
—
− 4.0
—
− 6.5
mAdc
—
60
—
30
—
60
—
1.0
Vdc
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 2
Publication Order Number:
J308/D