IRF530 Datasheet, PDF (1/7 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

IRF530
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TMOS E−FET.™
Power Field Effect
Transistor
N−Channel Enhancement−Mode Silicon
Gate
This advanced TMOS power FET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain−to−source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters, and PWM motor controls.
These devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating area are critical and offer
additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
http://onsemi.com
TMOS POWER FET
14 AMPERES, 100 VOLTS
R_DS(on) = 0.140 W
CASE 221A−09
TO-220AB
D
®
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 MΩ)
Gate−to−Source Voltage — Continuous
Gate−to−Source Voltage — Single Pulse (t_p ≤ 50 mS)
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (t_p ≤ 10 mS)
Total Power Dissipation @ T_C = 25°C
Derate above 25°C
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_D
I_DM
P_D
Operating and Storage Temperature Range
T_J, T_stg
UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS (T_J < 150°C)
Single Pulse Drain−to−Source Avalanche Energy — STARTING T_J = 25°C
E_AS
(V_DD = 75 V, V_GS = 10 V, PEAK I_L = 14 A, L = 1.0 mH, R_G = 25 W)
THERMAL CHARACTERISTICS
Thermal Resistance — Junction−to−Case°
Thermal Resistance — Junction−to−Ambient°
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
E−FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
This document contains information on a product under development. Motorola reserves
the right to change or discontinue this product without notice.
R_θJC
R_θJA
T_L
G
S
Value
100
100
± 20
± 25
14
10
49
78
0.63
−55 to 150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
°C
mJ
98
1.60
°C/W
62.5
275
°C
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 2
Publication Order Number:
IRF530/D