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| IMH20TR1G Datasheet, PDF (1/2 Pages) ON Semiconductor – Dual Bias Resistor Transistor | |||
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IMH20TR1G
Dual Bias Resistor
Transistor
NPN Surface Mount
⢠Low VCC (sat) 80 mV max at IC/IB = 50 mA/2.5 mA
⢠High Current: IC = 600 mA max
⢠This is a PbâFree Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
CollectorâBase Voltage
V(BR)CBO
CollectorâEmitter Voltage
V(BR)CEO
EmitterâBase Voltage
V(BR)EBO
Collector Current â Continuous
IC
THERMAL CHARACTERISTICS
Characteristic
Symbol
Power Dissipation*
PD
Junction Temperature
TJ
Storage Temperature
Tstg
*Total for both Transistors.
Value
30
15
5.0
600
Max
300
150
â55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
°C
°C
Q1 + Q2: NPN
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
CollectorâEmitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
CollectorâBase Breakdown Voltage
(IC = 50 mAdc, IE = 0)
V(BR)CBO
EmitterâBase Breakdown Voltage
(IE = 50 mAdc, IC = 0)
V(BR)EBO
CollectorâBase Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
EmitterâBase Cutoff Current
(VEB = 4.0 V, IC = 0)
IEBO
DC Current Gain (Note 1)
hFE
(VCE = 5.0 Vdc, IC = 50 mAdc)
CollectorâEmitter Saturation Voltage
(IC = 50 mAdc, IB = 2.5 mAdc)
VCE(sat)
Input Resistance
R1
1. Pulse Test: Pulse Width ⤠300 ms, D.C. ⤠2%.
Min Max Unit
15 â Vdc
30 â Vdc
5.0 â Vdc
â 0.5 mAdc
â 0.5 mAdc
100 600 â
â 80 mV
1.54 2.86 kW
http://onsemi.com
(4)
Q2
R1
(5)
(2)
(3)
SCâ74
(6)
R1
Q1
(1)
6
1
SCâ74R
318AA
Style 21
MARKING
DIAGRAM
H20 M
H20 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shippingâ
IMH20TR1G
SCâ74R 3000/Tape & Reel
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
January, 2004 â Rev. 0
Publication Order Number:
IMH20TR1G/D
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