IMH20T1G Datasheet, PDF (1/4 Pages) ON Semiconductor – Dual Bias Resistor Transistor

IMH20T1G
Dual Bias Resistor
Transistor
NPN Surface Mount
• Low V_CC (sat) 80 mV max at IC/IB = 50 mA/2.5 mA
• High Current: I_C = 600 mA max
• Lead Free Plating
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Collector- Base Voltage
V_(BR)CBO
Collector- Emitter Voltage
V_(BR)CEO
Emitter- Base Voltage
V_(BR)EBO
Collector Current - Continuous
I_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Power Dissipation*
P_D
Junction Temperature
T_J
Storage Temperature
T_stg
*Total for both Elements
Value
30
15
5.0
600
Max
300
150
- 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
°C
°C
http://onsemi.com
(4)
Q2
R1
(5)
(2)
(3)
SC - 74
(6)
R1
Q₁
(1)
6
1
SC - 74
MARKING
DIAGRAM
xx M
xx = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device^{
Package
Shipping
IMH20T1G
SC - 74 3000/Tape & Reel
†The “T1” suffix refers to a 7 - inch reel.
© Semiconductor Components Industries, LLC, 2003
July, 2003 - Rev. 0
Publication Order Number:
IMH20T1G/D