IMD10AMT1G_14 Datasheet, PDF (1/5 Pages) ON Semiconductor – Dual Bias Resistor Transistor

IMD10AMT1G
Dual Bias Resistor
Transistor
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias Resistor
Network
• High Current: I_C = 500 mA max
• This is a Pb−Free Device
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Value
Unit
Collector−Base Voltage
V_(BR)CBO
50
Collector−Emitter Voltage
V_(BR)CEO
50
Emitter−Base Voltage
V_(BR)EBO
5.0
Collector Current − Continuous
I_C
500
THERMAL CHARACTERISTICS
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Power Dissipation*
P_D
285
mW
Junction Temperature
T_J
150
°C
Storage Temperature
T_stg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*Total for both Transistors.
http://onsemi.com
(3) (2)
(1)
Q2
(4)
R1
Q₁
R2
R1
(5)
(6)
SC−74
MARKING
DIAGRAM
6
1
SC−74R
318AA
Style 21
D10 M
G
D10 = Specific Device Code
M = Date Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping^†
IMD10AMT1G SC−74R 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 1
Publication Order Number:
IMD10AMT1G/D