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IMD10AMT1G Datasheet, PDF (1/5 Pages) ON Semiconductor – Dual Bias Resistor Transistor | |||
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IMD10AMT1G
Dual Bias Resistor
Transistor
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias Resistor
Network
⢠High Current: IC = 500 mA max
⢠This is a PbâFree Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
CollectorâBase Voltage
V(BR)CBO
50
CollectorâEmitter Voltage
V(BR)CEO
50
EmitterâBase Voltage
V(BR)EBO
5.0
Collector Current â Continuous
IC
500
THERMAL CHARACTERISTICS
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Power Dissipation*
PD
285
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
â55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*Total for both Transistors.
http://onsemi.com
(3) (2)
(1)
Q2
(4)
R1
Q1
R2
R1
(5)
(6)
SCâ74
6
1
SCâ74R
318AA
Style 21
MARKING
DIAGRAM
D10 M
D10 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shippingâ
IMD10AMT1G
SCâ74R 3000/Tape & Reel
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
April, 2012 â Rev. 0
Publication Order Number:
IMD10AMT1G/D
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