FW4604 Datasheet, PDF (1/7 Pages) ON Semiconductor – Complementary Dual Power MOSFET

Ordering number : ENA0273B
FW4604
Power MOSFET
30V, 6A, 39mΩ, ^{–30V, –4.5A,} 65mΩ, Complementary Dual SOIC8
http://onsemi.com
Features
• _{On-state resistance Nch : RDS(on)1=30mΩ(typ.)}
Pch : RDS(on)1=50mΩ(typ.)
• _{4.5V drive}
• _{Halogen free compliance}
• _{Nch + Pch MOSFET}
• _{Protection diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
Conditions
N-channel P-channel
Unit
VDSS
VGSS
ID
IDP
IDP
PD
PT
Tch
Duty cycle≤1%
Duty cycle≤1%
When mounted on ceramic substrate (2000mm²Ã—0.8mm) 1unit, PW≤10s
When mounted on ceramic substrate (2000mm²Ã—0.8mm), PW≤10s
30
±20
6
6.5
24
1.8
2.2
150
--30
V
±20
V
--4.5
A
--5
A
--18
A
W
W
°C
Tstg
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7072-001
4.9
8
5
Product & Package Information
• Package
: SOIC8
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2,500 pcs./reel
FW4604-TL-2W
0.22
Packing Type : TL
Marking
1
1.27
4
0.445 ^{0.254 (GAGE PLANE)}
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SOIC8
W4604
TL
LOT No.
Electrical Connection
8
7
6
5
Semiconductor Components Industries, LLC, 2013
August, 2013
1
2
3
4
80713 TKIM/61312 TKIM/12512PA TKIM TC-00002681 No. A0273-1/7